Scanning probe based observation of bipolar resistive switching NiO films

摘要

The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.