...
首页> 外文期刊>Applied Physics Letters >Collisionless electron heating by radio frequency bias in low gas pressure inductive discharge
【24h】

Collisionless electron heating by radio frequency bias in low gas pressure inductive discharge

机译:低气压感应放电中通过射频偏置实现无碰撞电子加热

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We show experimental observations of collisionless electron heating by the combinations of the capacitive radio frequency (RF) bias power and the inductive power in low argon gas pressure RF biased inductively coupled plasma (ICP). With small RF bias powers in the ICP, the electron energy distribution (EED) evolved from bi-Maxwellian distribution to Maxwellian distribution by enhanced plasma bulk heating and the collisionless sheath heating was weak. In the capacitive RF bias dominant regime, however, high energy electrons by the RF bias were heated on the EEDs in the presence of the ICP. The collisionless heating mechanism of the high energy electrons transited from collisionless inductive heating to capacitive coupled collisionless heating by the electron bounce resonance in the RF biased ICP.
机译:我们通过电容性射频(RF)偏置功率和低氩气压RF偏置电感耦合等离子体(ICP)中的感应功率的组合显示了无碰撞电子加热的实验观察。借助ICP中较小的RF偏置功率,通过增强的等离子体本体加热,电子能量分布(EED)从双麦克斯韦分布转变为麦克斯韦分布,并且无碰撞护套加热很弱。但是,在电容性RF偏置占优势的状态下,存在ICP的情况下,由RF偏置产生的高能电子在EED上加热。高能电子的无碰撞加热机理是通过RF偏置ICP中的电子弹跳共振从无碰撞感应加热转变为电容耦合无碰撞加热的。

著录项

  • 来源
    《Applied Physics Letters》 |2012年第24期|p.1-5|共5页
  • 作者

    Lee Hyo-Chang; Chung Chin-Wook;

  • 作者单位

    Department of Electrical Engineering, Hanyang University, Seoul 133-791, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号