Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes

摘要

A direct correlation between efficiency droop and broadening of emission spectrum of InGaN/GaN quantum wells (QWs) with increasing current density is found. A model of incomplete carrier localization in InGaN/GaN QWs is proposed. At low injection, the strong carrier localization and high-energy cutoff of emission spectrum results from fast carrier energy relaxation due to carrier hopping between localized tail states in QWs. At high level injection, the energy relaxation rate decreases due to the partial filling of tail states and high energy slope of the spectrum starts to determine by Boltzmann occupancy of tail states. This results in the incomplete carrier localization and the efficiency droop.