机译:了解具有不同载流子定位程度的InGaN / GaN多量子阱蓝色发光二极管中的效率下降效应
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People's Republic of China;
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People's Republic of China;
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People's Republic of China;
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People's Republic of China;
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084, People's Republic of China;
机译:了解具有不同载流子定位程度的InGaN / GaN多量子阱蓝色发光二极管中的效率下降效应
机译:在独立式GaN衬底上生长的InGaN / GaN多量子阱蓝色发光二极管中的效率下降
机译:InGaN / GaN多量子阱蓝色发光二极管中的效率下降与电致发光的蓝移之间的相关性
机译:InGaN / GaN多量子阱对蓝光发光二极管效率下垂的P-N量子屏障的影响
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:确定InGaN / GaN载流子分布的因素 多量子阱发光二极管