Microscopic modeling of scattering quantum non-locality in semiconductor nanostructures

摘要

In spite of their intrinsic validity limits, a number of Boltzmann-like simulation schemes are extensively employed in the investigation of semiconductor nanomaterials and nanodevices. Such modeling strategies, based on the neglect of carrier phase coherence, are definitely unable to describe space-dependent ultrafast phenomena. In this letter, we shall propose a quantum-mechanical modeling strategy able to properly account for scattering-induced spatial non-locality. Its power and flexibility will be demonstrated via a few simulated experiments.