Direct observation of charge transfer region at interfaces in graphene devices

摘要

Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our “3D nano-ESCA” (three-dimensional nanoscale electron spectroscopy for chemical analysis) equipment in order to investigate the local electronic states at interfaces in a graphene device structure. We have succeeded in detecting a charge transfer region at the graphene/metal-electrode interface, which extends over ～500?nm with the energy difference of 60?meV. Moreover, a nondestructive depth profiling reveals the chemical properties of the graphene/SiO2-substrate interface.