SnS thin film solar cells with Zn_1-xMg_xO buffer layers

摘要

The conduction band offset (CBO) of SnS as the light absorbing layer and face='roman'>Zn_1-x face='roman'>Mg_x face='roman'>O as the buffer layer in SnS thin film solar cells has been optimized to improve the solar cell conversion efficiency. We controlled the CBO experimentally by varying the Mg content (x) of the face='roman'>Zn_1-x face='roman'>Mg_x face='roman'>O layer. The optimum CBO value range for improved solar cell performance was determined to be from -0.1 to 0?eV. A SnS thin film solar cell sample with the optimum CBO value exhibited conversion efficiency of approximately 2.1%.