Correlation between optical emission spectroscopy of hydrogen/germane plasma and the Raman crystallinity factor of germanium layers

摘要

Optical emission measurements were recorded during microcrystalline germanium layer growth on glass with plasma enhanced chemical vapor deposition. A significant difference for the intensities of SiH and GeH could be identified in the optical emission spectra of hydrogen/silane (H₂/SiH₄) and hydrogen/germane (H₂/GeH₄) plasma. In H₂/SiH₄ plasma, Si and SiH are present, whereas Ge but no GeH could be detected in H₂/GeH₄ plasma. The specific Raman crystallinity factor (Φ_c) was evaluated for the layers after deposition. In H₂/GeH₄ plasma, the ratio of optical emission intensities of H_α (I(H_α), λ?=?656.28?nm) and Ge (I(Ge), λ?=?303.90?nm) is proportional to Φ_c,Ge.