Scalable fabrication of graphene devices through photolithography

摘要

Scalable fabrication of high quality graphene devices is highly desired and important for the practical applications of graphene material. Graphene devices are massively fabricated on SiO2/Si substrate through an efficient process, which combines large scaled growth of monolayer graphene on Pt foil, modified bubbling transfer and photolithography-based device fabrication. These graphene devices present yield up to 86% (70 out of 81), field-effect mobility around 2500?cm2 V-1 S-1 and Dirac point voltage near to 0?V, as well as a narrow performance metrics distribution. In addition, as-fabricated graphene Hall elements through this process exhibit high current sensitivity typically up to 1200?V/AT.