Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)

摘要

We demonstrate a strong dependence of the anisotropic magnetoresistance (AMR) on the direction of current with respect to the crystalline axes in the quaternary diluted ferromagnetic semiconductor Ga_0.94Mn_0.06As_0.9Sb_0.1. Dominant cubic and uniaxial symmetries are observed for current along the [1 style='border-top:solid 1px black;'>10] and [110] crystalline directions, respectively. In addition, an anomalous temperature dependence of the symmetry and magnitude of the AMR is observed. Phenomenological analysis reveals an important contribution of a crossed cubic crystallineon-crystalline term, which is much larger than previously observed in (Ga,Mn)As films. Possible reasons for the enhancement of this term are discussed.