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Eliminating defects from graphene monolayers during chemical exfoliation

机译:消除化学剥落过程中石墨烯单层的缺陷

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摘要

Graphene layers with and without defects have been grown by chemically exfoliating graphite in organic solvents and characterized by different spectroscopic techniques. It has been shown that defects can be controlled in graphene layers while intercalating different organic molecules in graphite. The transfer characteristics of transistors fabricated on graphene monolayers exfoliated using organic solvent with low dielectric constant and low boiling point show almost no shift of minimum conductivity point, i.e., Dirac point, indicating defect free pristine graphene.
机译:通过在有机溶剂中化学剥落石墨,可以生长出具有和没有缺陷的石墨烯层,并通过不同的光谱技术对其进行表征。已经表明,可以在石墨烯层中控制缺陷,同时在石墨中插入不同的有机分子。在使用具有低介电常数和低沸点的有机溶剂剥离的石墨烯单层上制造的晶体管的传输特性几乎没有显示出最小电导率点即狄拉克点的偏移,表明无缺陷的原始石墨烯。

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