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Large electrostrain in poled and aged acceptor-doped ferroelectric ceramics via reversible domain switching

机译:通过可逆域切换在极化和老化的掺杂受体的铁电陶瓷中产生大的电应变

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摘要

The electrostrain behavior through reversible domain switching in aged acceptor-doped ferroelectric ceramics has been widely investigated in the past decade. However, previous works were focused on unpoled ceramics, which could only utilize part of domains to exchange nonequal crystalline axis to generate strain under external electric field. In this paper, we proposed an effective method: (1) Initially, the acceptor-doped ceramics should be poled. (2) Then, the ceramics need to be aged for enough time. (3) Finally, the applied electric field should be perpendicular to the poling direction. Our method can utilize more domains to exchange nonequal crystalline axis to contribute to electrostrain in comparison with unpoled ceramics reported in the literature. According to our method, the unipolar electrostrain of 1.5 mol. % Fe-doped (Pb,Ba,Sr)(Zr,Ti)O ceramics in this work could reach 0.33%, which was 3.75 times larger than that of unpoled one at 3.0 kV mm. Meanwhile, the normalized strain d could reach nearly 1100 pm V which was one of the highest values reported in ferroelectric ceramics. Additionally, the ceramics displayed interesting double or slim P-E (polarization-electric field) hysteresis loops at various electric fields. Our work provides a general method via reversible domain switching in aged acceptor-doped ferroelectric ceramics to obtain large electrostrain for high-displacement actuator applications.
机译:在过去的十年中,已经广泛地研究了老化的掺杂受体的铁电陶瓷中通过可逆域转换引起的电应变行为。但是,以前的工作集中在无极陶瓷上,这种陶瓷只能利用部分畴交换不相等的晶轴在外部电场下产生应变。在本文中,我们提出了一种有效的方法:(1)首先,应将掺杂受体的陶瓷极化。 (2)然后,陶瓷需要老化足够的时间。 (3)最后,施加的电场应垂直于极化方向。与文献中报道的未极化陶瓷相比,我们的方法可以利用更多的域来交换不均等的晶轴,从而有助于电应变。根据我们的方法,单极电应变为1.5μmol。在这项工作中,Fe掺杂的(Pb,Ba,Sr)(Zr,Ti)O陶瓷的百分含量可以达到0.33%,是3.0 kV mm时非极化陶瓷的3.75倍。同时,归一化应变d可以达到接近1100 pm V,这是铁电陶瓷中报道的最高值之​​一。此外,陶瓷在各种电场下均表现出有趣的双倍或细长P-E(极化电场)磁滞回线。我们的工作提供了一种通过在受主掺杂的铁电陶瓷中进行可逆域切换的通用方法,以获得用于大位移执行器应用的大型电应变。

著录项

  • 来源
    《Applied Physics Letters》 |2014年第26期|1-4|共4页
  • 作者单位

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-17 13:10:41

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