Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater

摘要

The high programming current density of phase change memory (PCM) is an obstacle for its scaling and high density chip development. In this paper, an elevated-confined PCM (e-PCM) with self-aligned oxidation heater was proposed to reduce the programming current density by increasing the Joule heat and reducing heat loss simultaneously. 200 nm diameter size e-PCM with self-aligned TiWO heater was fabricated and tested. The RESET current is 350 μA with 100 ns pulse and the corresponding programming current density is 1.12 MA/cm. The low current density indicates this structure as a promising candidate for high density PCM chip applications.