Demonstration of magnetoelectric memory cell in (110) [Pb(Mg1/2Nb2/3)O3]0.68-[PbTiO3]0.32/Ru/FeCo heterostructures

摘要

An electric-field pulses driven magnetoelectric memory cell in a single layered ferromagnetic thin film was fabricated by direct-current magnetron sputtering Ru/Fe65Co35 on ferroelectric (110) [Pb(Mg1/2 Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetization in the orthogonal directions can be reset by the positiveegative electric fields pulse in PMN-PT/Ru/FeCo heterostructures due to the strain mediated converse magnetoelectric effect. The high (low) resistance state was realized under the negative (positive) electric fields pulse due to the anisotropy magnetoresistance of FeCo films. Then, a non-volatile magnetic memory cell with resistance and electric field, respectively, as the media and writing field was realized.