Optimization of the semiconductor-metal transition in VO2 epitaxial thin films as a function of oxygen growth pressure

摘要

High quality VO2 epitaxial thin films were deposited on sapphire single crystal substrates by pulsed laser deposition and their semiconductor-to-metal transitions (SMTs) were characterized as a function of film growth conditions. Varying the oxygen pressure during deposition affected the number of oxygen vacancies, which allowed tuning of the crystal structure and phase transition properties of the VO2 films. Films grown at optimized conditions exhibited a significant resistivity drop (>104 Ω-cm) across the SMT that is correlated with the strain due to oxygen vacancies. This resistivity drop is mainly accounted for by a large change in carrier density at the SMT.