机译:阳离子外扩散和自掺杂对采用ZnO / ITO异质结构的透明忆阻器装置切换机构的负面影响
Centre for Electronics Frontiers University of Southampton Southampton SO17 1BJ United Kingdom Institute of Electronics National Chiao Tung University Hsinchu 30010 Taiwan;
Advanced Research Institute Dr. MGR Educational and Research Institute Chennai 600095 India;
Department of Physics National Institute of Science and Technology Berhampur 761 008 India;
Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan;
Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan;
Institute of Physics National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan;
Centre for Electronics Frontiers University of Southampton Southampton SO17 1BJ United Kingdom;
Institute of Electronics National Chiao Tung University Hsinchu 30010 Taiwan;
机译:透明AZO / ZnO / ITO电阻随机存取存储器件的制备及其ZnO有源层沉积的温度依赖性开关特性
机译:透明AZO / ZnO / ITO电阻随机存取存储器件的制备及其ZnO有源层沉积的温度依赖性开关特性
机译:使用热辊层压技术制造的ITO / EVA:ZnO NPs / ITO透明存储器件的双稳态开关行为
机译:透明ZnO膜基电阻开关装置的制造与表征
机译:二维电子气(2DEG)生长的Zn-极性BeMgZnO / ZnO异质结构和BeMgZnO / ZnO异质结构上银肖特基二极管的制备
机译:使用透明掺硼氧化锌薄膜的电阻开关存储器件中的导电机理
机译:用于制作完全透明的模拟Memitristor器件的ZnO2 / ZnO双层开关胶片