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机译:在宽温度范围内,外延La0.67Ca0.33MnO3 / NdGaO3„ 001…薄膜的拟晶形应变诱导出强各向异性磁电阻
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology ofChina, Hefei 230026, People’s Republic of ChinaTechnology, 1 Dai Co Viet Str., Hanoi, VietnamPeople’s Republic of China55435, USAJungiusstrasse 9, 20355 Hamburg, Germanyof Technology Madras, Chennai 600036, India215006, People’s Republic of China;
机译:伪晶应变在宽温度范围内在外延La_(0.67)Ca_(0.33)MnO_3 / NdGaO_3(001)薄膜中引起强各向异性磁电阻
机译:生长氧气压力对外延La0.67Ca0.33MnO3 / NdGaO3(001)薄膜中各向异性应变诱导相分离的影响
机译:(001)ZrO2(Y2O3)衬底上La0.35Nd0.35Sr0.3MnO3外延薄膜的巨大磁阻在宽温度范围内
机译:Ge(001)衬底上Ge
机译:各向异性衬底上外延铁电薄膜的应变工程
机译:(110)NdGaO3上高外延LaBaCo2O5.5 +δ薄膜中的各向异性应变诱导的方向金属性
机译:外延La0.67Ca0.33mnO3 / NdGaO3(001)薄膜的退火辅助衬底相干性和高温反铁磁绝缘跃迁
机译:部分离子束沉积技术低温外延生长CoGe(001)/ Gaas(100)薄膜