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首页> 外文期刊>Applied Physics Letters >Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial La0.67Ca0.33MnO3 /NdGaO3„001…films
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Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial La0.67Ca0.33MnO3 /NdGaO3„001…films

机译:在宽温度范围内,外延La0.67Ca0.33MnO3 / NdGaO3„ 001…薄膜的拟晶形应变诱导出强各向异性磁电阻

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摘要

Strong anisotropic magnetoresistance u0002AMRu0003 was observed in La0.67Ca0.33MnO3 films grownncoherently on the orthorhombic NdGaO3u0002001u0003 substrates. With an increased orthorhombic latticendistortion due to the pseudomorphic strain, the films show not only a ferromagnetic-metal u0002FMu0003ntransition at TC of u0004265 K, but also the phase coexistence of FM and antiferromagnetic-insulatornbelow u0004250 K. The phase competitions are very sensitive to the magnetic field, and morenstrikingly, to its orientations with respect to the crystal axes resulting in a large AMR in a broadntemperature range, in addition to the conventional one peaked near TC. The films also show uniaxialnmagnetic anisotropy with the easy axis along the elongated b axis, suggesting that it is the strainninduced spin-orbit-lattice coupling and the resultant phase competitions that control the AMR innepitaxial manganite films. © 2010 American Institute of Physics. u0005doi:10.1063/1.3524193u0006nu0004doi:10.1063/1.3526378
机译:在正交的NdGaO3u0002001u0003衬底上相干生长的La0.67Ca0.33MnO3薄膜中观察到强各向异性磁电阻u0002AMRu0003。由于拟晶应变,正交晶体的晶格取向增加,薄膜不仅显示出u0002FMu0003n在TC处的铁磁性金属跃迁,而且在u0004250 K以下还存在FM和反铁磁绝缘体的相共存。相竞争对磁非常敏感除了传统的接近于TC的峰值外,还产生了更令人吃惊的相对于晶轴的取向,导致在较宽的温度范围内产生较大的AMR。薄膜还表现出单轴各向异性,其易轴沿伸长的b轴,这表明是由应变引起的自旋-轨道-晶格耦合以及由此产生的相竞争控制了AMR非内延锰矿薄膜。 ©2010美国物理研究所。 u0005doi:10.1063 / 1.3524193u0006nu0004doi:10.1063 / 1.3526378

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  • 来源
    《Applied Physics Letters 》 |2010年第24期| p.1-3| 共3页
  • 作者单位

    Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology ofChina, Hefei 230026, People’s Republic of ChinaTechnology, 1 Dai Co Viet Str., Hanoi, VietnamPeople’s Republic of China55435, USAJungiusstrasse 9, 20355 Hamburg, Germanyof Technology Madras, Chennai 600036, India215006, People’s Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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