Suppression of substrate oxidation during ozone based atomic layer deposition of Al2O3: Effect of ozone flow rate

摘要

We demonstrate that interfacial SiO2, usually formed during high-u0002 oxide growth on silicon usingnozone u0002O3u0003, is suppressed during Al2O3 atomic layer deposition u0002ALDu0003 by decreasing the O3 flownrate. First-principles calculations indicate that oxygen introduced by the first low-dose O3 exposurenis inserted into the surface nucleation layer rather than the Si lattice. Subsequent Al2O3 depositionnfurther passivates the surface against substrate oxidation. Aluminum methoxy u0004–Alu0002OCH3u00032u0005 andnsurface Al–O–Al linkages formed after O3 pulses are suggested as the reaction sites forntrimethylaluminum during ALD of Al2O3.n© 2010 American Institute of Physics. u0004doi:10.1063/1.3500821