Nanomeasurements of electronic and mechanical properties of fullerene

摘要

This study describes the feasibility of fabricating of a single layer of fullerene embedded Si surfacenthrough a controlled self-assembly mechanism in an ultrahigh vacuum u0002UHVu0003 chamber. Thencharacteristics of the fullerene embedded Si surface are investigated directly using UHV-scanningnprobe microscopy. Additionally, the band gap energy and field emission parameters, includingnturn-on field and the field enhancement factor u0002 of the fullerene embedded Si substrate, arendetermined using a high-voltage source measurement unit and UHV-scanning tunneling microscopy,nrespectively. Moreover, the nanomechanical properties, which represent the stress of the fullerenenembedded Si substrates, are assessed by an environment atomic force microscope u0002AFMu0003 andnUHV-AFM, respectively. Results of this study demonstrate that a single layer of the fullerenenembedded surface has superior properties for nanotechnology applications owing to the ability toncontrol the self-assembly mechanism of fabrication. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3475775