High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis„triisopropylsilylethynyl… pentacene transistors

摘要

Organic nanofloating gate memory devices were developed based on ink-jet printedn6,13-bisu0002triisopropylsilylethynylu0003u0002TIPSu0003 pentacene thin-film transistors u0002TFTsu0003 embedding goldnnanoparticles. The programming/erasing operations showed that the organic memory devicesnexhibited good programmable memory characteristics that resulted in a gate-voltage controllednreliable threshold voltage shift of the programmed/erased states. The data retention and endurancenmeasurements also showed the reliable nonvolatile memory properties. Solution processes werenused for synthesis of the charge trapping elements and TIPS-pentacene TFTs were made by thenink-jet printing technique at low temperatures. Therefore, these processes can readily be adopted innall-printed organic memory devices on flexible substrates. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3435470