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Templated epitaxy of TiO_2(B) on a perovskite

机译:TiO_2(b)在佩洛夫斯的模板外延

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摘要

The bronze-phase TiO_2(B) has an open atomic framework that makes it a good candidate for applications in photochemical and electrochemical conversion of energy. However, the synthesis of bronze-phase TiO_2(B) thin films on perovskite substrates, such as SrTiO_3 (STO), which is one of the most conventional versatile substrates for oxide epitaxy, has been extremely challenging owing to the preferential formation of the anatase TiO_2 over TiO_2(B). The main reason is that the anatase TiO_2 has not only a smaller lattice mismatch than TiO_2(B), but also a better structural symmetry match when grown on STO. Here, we demonstrate a way to circumventing this problem by using a VO_2(B) buffer layer, yielding the growth of a high-quality single crystalline TiO_2(B) film on a (001)-oriented STO substrate. From the resulting TiO_2(B) film, we found that this film has a large optical bandgap of ~3.6 eV, which is close to the known theoretical value, the largest among TiO_2 polymorphs, and useful for developing high-power energy devices.
机译:青铜相TiO_2(b)具有开放原子框架,使其成为光化学和电化学转换的应用的良好候选者。然而,由于锐钛矿的优先形成,钙钛矿基材上的钙钛矿衬底(例如SrTiO_3(STO)的薄膜的合成是最常规的氧化物外延的氧化物基质之一。由于锐钛矿的优先形成,这一直是极其挑战tio_2 over tio_2(b)。主要原因是锐钛矿TiO_2不仅具有比TiO_2(B)更小的晶格不匹配,而且在STO生长时也是更好的结构对称匹配。在这里,我们通过使用VO_2(B)缓冲层来证明一种方法来规避这个问题,从而产生高质量的单晶TiO_2(B)膜在(001)的STO衬底上的生长。从得到的TiO_2(b)膜中,我们发现该薄膜具有大的光学带隙的〜3.6eV,其接近已知的理论值,是TiO_2多晶型物中最大的,并且用于开发高功率能量装置。

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  • 来源
    《Applied Physics Letters》 |2020年第13期|133903.1-133903.5|共5页
  • 作者单位

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA Department of Emerging Materials Science Daegu-Gyeongbuk Institute of Science and Technology Daegu 42988 South Korea;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA Center for Correlated Electron Systems Institute for Basic Science Seoul 08826 South Korea Department of Physics and Astronomy Seoul National University Seoul 08826 South Korea;

    Department of Emerging Materials Science Daegu-Gyeongbuk Institute of Science and Technology Daegu 42988 South Korea;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    Center for Correlated Electron Systems Institute for Basic Science Seoul 08826 South Korea Department of Physics and Astronomy Seoul National University Seoul 08826 South Korea;

    Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 22:18:02

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