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Light-induced degradation and self-healing inside CH_3NH_3Pbl_3-based solar cells

机译:基于CH_3NH_3PBL_3的太阳能电池内光引起的降解和自愈合

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摘要

CH_3NH_3PbI_3 (MAPbI_3)-based perovskite solar cells (PSCs) with special hole and electron transport layers (HTL and ETL) were prepared to study their light-induced degradation. Obvious degradation was observed under initial light exposure not only at the device level but also at the film morphology and electronic structure level. Device performance parameters,such as short-circuit current (J_(SC))> power conversion efficiency,fill factor,and hysteresis effect,were aggravated with an initial light exposure of less than ~8 h at 1 sun intensity. Meanwhile,the deteriorated crystallinity and electronic structure of the MAPbI_3 film were also detected with x-ray diffraction,ultraviolet photoelectron spec-troscopy,and UV-Visible absorption spectroscopy. The observed degradation is rationally related to the light-induced decomposition of MAPbI_3. However,the degradation can be partly recovered with the following light exposure resulting in self-healing of the devices and MAPbI_3 films. The self-healing behavior should be ascribed to the conversion of decomposition products back to MAPbI_3,because the intermediates are wrapped tightly in the photoactive layer by the compact coverlayers of HTLs and ETLs and some reversible reactions occur consequently. The mechanism of self-healing is discussed by introducing the trapped states derived from ion migration. The PSCs prepared here imply a good optical stability and thus a good performance facilitated by tight wrapping of the active MAPbI_3.
机译:CH_3NH_3PBI_3(MAPBI_3)基于具有特殊孔和电子传输层(HTL和ETL)的佩罗夫斯基钛矿太阳能电池(PSC)以研究它们的光引起的降解。在初始光暴露下观察到明显的降解,不仅在设备水平,而且在薄膜形态和电子结构水平下观察到明显的降解。设备性能参数,如短路电流(J_(SC))>功率转换效率,填充因子和滞后效果,初始光线暴露在1个太阳强度下小于〜8小时。同时,也用X射线衍射,紫外光电和吸收光谱检测MAPBI_3膜的劣化结晶度和电子结构。观察到的降解与MAPBI_3的光诱导分解合理地有关。然而,可以通过以下光曝光部分地回收降解,从而导致器件的自愈合和MAPBI_3膜。自我愈合行为应归因于分解产物的转化率回到MAPBI_3,因为中间体通过HTLS和ETL的紧凑覆盖层紧密缠绕在光活性层中,因此发生了一些可逆反应。通过引入来自离子迁移的被捕获的状态来讨论自我愈合机制。这里制备的PSC暗示良好的光学稳定性,因此通过活跃MAPBI_3的紧张包裹促进了良好的性能。

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  • 来源
    《Applied Physics Letters》 |2020年第25期|253303.1-253303.5|共5页
  • 作者单位

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    College of Electronic Information and Electrical Engineering Xiangnan University Chenzhou 423000 People's Republic of China;

    Department of Physics Kashgar University Kashgar 844006 People's Republic of China;

    Institute of Super-Microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 People's Republic of China;

    Department of Physics and Astronomy University of Rochester Rochester New York 14627 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 22:17:59

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