Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics

摘要

Practical applications of low-defect Ⅲ-Ⅴ materials grown on Si require large areas for patterning metal contacts and enhancing design flexibility. Here, we report selective area growth of bufferless and micrometer-scale InP on commercial (001)-oriented silicon-on-insulators. We obtained in-plane, centimeter-long and micrometer-wide InP single crystal stripes right atop the buried oxide layer through leveraging the lateral aspect ratio trapping (lateral ART) growth method. Using the extended InP grown by "lateral ART," we inserted InGaAs quantum wells emitting at the telecom bands. Numerical simulation suggests that the micrometer-scale InP can support the fundamental TE mode with an ultra-low metal-induced propagation loss of 3.2 dB/cm when patterned into ridge waveguides and introducing metal contacts at both ends. Our results here represent a leap toward electrically driven Ⅲ-Ⅴ lasers seamlessly interfaced with Si-photonics.