Carrier leakage via interface-rough ness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers

摘要

When conventionally calculating carrier leakage for state-of-the-art quantum cascade lasers (QCLs), that is, LO-phonon-assisted leakage from the upper laser level via electron thermal excitation to high-energy active-region (AR) states, followed by relaxation to low-energy AR states, ～18%-wide gaps were recently found between calculated and experimentally measured internal efficiency values. We incorporate elastic scattering [i.e., interface-roughness (IFR) and alloy-disorder scattering] into the carrier-leakage process and consider carrier leakage from key injector states as well. In addition, the expressions for LO-phonon and IFR-triggered carrier-leakage currents take into account the large percentage of thermally excited electrons that return back to initial states via both inelastic and elastic scattering. As a result, we find that the gaps between theoretical and experimental internal efficiency values are essentially bridged. Another finding is that, for the investigated state-of-the-art structures, IFR scattering causes the total carrier leakage to reach values as much as an order of magnitude higher than conventional inelastic scattering-only leakage. The developed formalism opens the way to significantly increase the internal efficiency (i.e., to more than 80%) via IFR-scattering engineering, such that maximum wall-plug efficiencies close to projected fundamental, both-facets values (e.g., 42% at λ = 4.6 μm) can be achieved. By employing this formalism, we reached a 4.6 μm-emitting-QCL preliminary design for suppressing IFR-triggered carrier leakage, which provides an internal efficiency of 86% as well as a projected single-facet wall-plug efficiency value of 36% at a heatsink temperature of 300 K.