Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure

摘要

Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of Si_3N_4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is required to study in detail the charge transport mechanism in a Si_3N_4-based memristor to further improve the cell element and to create a matrix of these elements. Despite many research activities carried out, the charge transport mechanism in Si_3N_4-based memristors is still unclear. Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using low-pressure chemical vapor deposition at 700 °C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about five orders of magnitude. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps. Trap parameters were determined in the Si_3N_4-based memristor in the high resistive state.