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Defect states of organic lead halide single crystals grown by inverse-temperature crystallization

机译:通过逆温度结晶生长的有机铅卤化物单晶的缺陷状态

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摘要

We investigated the defect states of organic lead halide (CH3NH3PbX3: CH3NH3+) methylammonium (MA; X = Br- and I-) by using optical pulse-induced conductance transient spectroscopy. Organic lead halide single crystals having a bandgap ranging from 2.16 to 1.45 eV were grown by inverse temperature crystallization. The shallow trap energy level of MAPbBr(2.5)I(0.5) was E-v + 0.06 eV. The deep level traps of MAPbBr(3) and MAPbI(3) were E-v + 1.24 and E-v + 0.84 eV, respectively. The deep level traps of organic lead halide may have decreased the reactivity between iodide and bromide ions in the crystal lattice. Varying the ratio of halides in the perovskite can change the defect species in the crystals and can increase the photoconversion efficiency by decreasing the density of deep level traps.
机译:通过使用光脉冲诱导的电导瞬态光谱研究,我们研究了有机铅卤化物(CH3NH3PBX3:CH3NH3 +)甲基铵(MA; x = BR-和I-)的缺陷状态。通过逆温度结晶生长具有2.16至1.45eV的带隙的有机铅卤化物单晶。 MAPBBR(2.5)I(0.5)的浅陷阱能量水平为E-V + 0.06eV。 MAPBBR(3)和MAPBI(3)的深层陷阱分别为E-V + 1.24和E-V + 0.84eV。有机铅卤化物的深水位阱可能降低了晶格中碘化物和溴离子之间的反应性。改变钙钛矿中的卤化物的比例可以改变晶体中的缺陷物种,并且可以通过降低深度陷阱的密度来提高光电转换效率。

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  • 来源
    《Applied Physics Letters》 |2019年第15期|153302.1-153302.4|共4页
  • 作者单位

    Hanyang Univ Dept Phys Seoul 04763 South Korea|Hanyang Univ Res Inst Convergence Basic Sci Seoul 04763 South Korea;

    SK Hynix Inc NAND Prod Engn Icheon 17336 South Korea;

    Hanyang Univ Dept Phys Seoul 04763 South Korea|Hanyang Univ Res Inst Convergence Basic Sci Seoul 04763 South Korea;

    Sungkyunkwan Univ Dept Energy Sci Suwon 16419 South Korea;

    Sungkyunkwan Univ Dept Energy Sci Suwon 16419 South Korea;

    Hanyang Univ Dept Phys Seoul 04763 South Korea|Hanyang Univ Res Inst Convergence Basic Sci Seoul 04763 South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 22:17:49

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