Vertical geometry 33.2 A, 4.8 MW cm~2 Ca_2O_3 field-plated Schottky rectifier arrays

摘要

The performance of arrays consisting of 21 -Ga2O3 field-plated rectifiers fabricated on thick epitaxial layers (n-type carrier concentration approximate to 1.6x10(16) cm(-3)) grown on conducting substrates (carrier concentration 3x10(19) cm(-3)) is reported. We show that by interconnecting the output of 21 smaller (0.4x0.4mm(2) to 1x1mm(2), total area 0.09cm(2)) individual rectifiers using e-beam deposited Au, we can achieve a high total forward output current of 33.2A, at 4.25V in the single-sweep voltage mode, and a low forward turn-on voltage of 2.9V (defined at 100Acm(-2)) and maintain a reverse breakdown voltage of 240V (defined at 1Acm(-2)). The current density was 376Acm(-2), and the on-state resistance was 0.012 cm(2). The total forward current was 10A at 1.9V and 22A at 3V. The power figure-of-merit for the array, V-B(2)/R-ON, was 4.8MWcm(-2), with a reverse recovery time of individual rectifiers of 32ns. The on/off ratio of the rectifier array was in the range of 10(5)-10(10) for +1V/-1 to -100V.