机译:通过直接在氮化硅上直接通过化学气相沉积生长的大面积均匀石墨烯样薄膜
Department of Microtechnology and Nanoscience Quantum Device Physics Laboratory Chalmers University of Technology S-41296 Gothenburg Sweden;
Department of Microtechnology and Nanoscience Quantum Device Physics Laboratory Chalmers University of Technology S-41296 Gothenburg Sweden;
Department of Engineering Electrical Engineering Division University of Cambridge 9 JJ Thomson Avenue CB3 OFA Cambridge United Kingdom;
AIXTRON Nanoinstruments Ltd. Swavesey CB24 4FQ Cambridge United Kingdom;
Department of Microtechnology and Nanoscience Quantum Device Physics Laboratory Chalmers University of Technology S-41296 Gothenburg Sweden;
机译:等离子体增强化学气相沉积的大面积硅 - 氮化物薄膜沉积的参数研究和残余气体分析
机译:在In0.82Al0.18As上通过电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积生长的氮化硅膜的界面特性
机译:喷头配置对等离子体增强化学气相沉积对大面积氮化硅薄膜影响的实验研究
机译:通过氦等离子体增强化学气相沉积法生长的高质量氮化硅薄膜
机译:通过光子辅助的电子回旋共振化学气相沉积法生长的非晶和微晶硅薄膜,用于异质结太阳能电池和薄膜晶体管。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:通过化学气相沉积直接在氮化硅上生长的大面积均匀石墨烯状薄膜