首页> 外文期刊>Applied Physics Letters >Low resistance at LiNi_(1/3)Mn_(1/3)Co_(1/3)O_2 and Li_3PO_4 interfaces
【24h】

Low resistance at LiNi_(1/3)Mn_(1/3)Co_(1/3)O_2 and Li_3PO_4 interfaces

机译:LiNi_(1/3)Mn_(1/3)Co_(1/3)O_2和Li_3PO_4界面处的电阻低

获取原文
获取原文并翻译 | 示例
       

摘要

We report the low resistance observed at the interface of LiNi1/3Mn1/3Co1/3O2 (NMC) and Li3PO4. First, we show the deposition of high-quality single-phase NMC (001) epitaxial thin films on Al2O3 (0001) substrates using pulsed laser deposition. Controlling the oxidation states of the three transition metals in NMC films is crucial for stable battery operation. However, in general, it is very difficult to simultaneously control the oxidation states of three elements in vacuum deposition processes. Tuning the oxygen partial pressure and temperature during deposition led to the growth of NMC thin films with ideal oxidation states (Ni2+, Mn4+, and Co3+), as confirmed using bulk-sensitive x-ray excited optical luminescence. Next, using the NMC epitaxial thin films, we prepared solid-state batteries that demonstrated stable operation and very low resistance at the solid electrolyte/electrode interfaces. These results provide insight into the fabrication of multi-transition-metal electrode thin film materials, which are important for investigating the mechanisms of lithium battery operation. Furthermore, the low interface resistance indicates that Li3PO4 and oxide electrode materials form very stable low-resistance interfaces.
机译:我们报告了在LiNi1 / 3Mn1 / 3Co1 / 3O2(NMC)和Li3PO4的界面处观察到的低电阻。首先,我们显示了使用脉冲激光沉积在Al2O3(0001)衬底上沉积高质量的单相NMC(001)外延薄膜。控制NMC膜中三种过渡金属的氧化态对于稳定电池操作至关重要。然而,通常,在真空沉积工艺中同时控制三个元素的氧化态非常困难。如使用体敏x射线激发的光学发光所证实的,在沉积过程中调节氧分压和温度导致NMC薄膜具有理想的氧化态(Ni2 +,Mn4 +和Co3 +)的生长。接下来,使用NMC外延薄膜,我们制备了固态电池,该固态电池在固态电解质/电极界面处表现出稳定的运行性能和非常低的电阻。这些结果为多过渡金属电极薄膜材料的制造提供了见识,这对于研究锂电池的运行机理很重要。此外,低的界面电阻表明Li3PO4和氧化物电极材料形成了非常稳定的低电阻界面。

著录项

  • 来源
    《Applied Physics Letters》 |2020年第5期|053901.1-053901.5|共5页
  • 作者

  • 作者单位

    Tokyo Inst Technol Sch Mat & Chem Technol Tokyo 1528552 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory 1-1 Oho Tsukuba Ibaraki 3050801 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory 1-1 Oho Tsukuba Ibaraki 3050801 Japan|Tohoku Univ Inst Multidisciplinary Res Adv Mat Sendai Miyagi 9808577 Japan;

    Tokyo Inst Technol Sch Mat & Chem Technol Tokyo 1528552 Japan|JST PRESTO Dept Res Promot Tokyo 1020076 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 05:22:27

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号