首页> 外文期刊>Applied Physics Letters >Interfacial Dzyaloshinskii-Moriya interaction between ferromagnetic insulator and heavy metal
【24h】

Interfacial Dzyaloshinskii-Moriya interaction between ferromagnetic insulator and heavy metal

机译:铁磁绝缘子与重金属之间的界面Dzyaloshinskii-Moriya相互作用

获取原文
获取原文并翻译 | 示例
       

摘要

Recent demonstration of the interfacial Dzyaloshinskii-Moriya interaction (DMI) between a heavy metal and a magnetic insulator provides the possibility to manipulate chiral spin textures in the magnetic insulator for the extremely low power consumption devices. However, the origin and strength of the interfacial DMI remain in dispute in this system. We used the electrical transport measurements to determine the DMI strength to be similar to 0.040 pJ/m at room temperature in Pt/Tm3Fe5O12 (TmIG) bilayers. The TmIG saturation magnetization and DMI strength exhibit different temperature dependences, which is attributed to the DMI being mainly contributed by Fe ions instead of Tm ions. With a Cu layer inserted between Pt and TmIG, the DMI strength is reduced to similar to 0.012 pJ/m and the topological Hall effect vanishes, strongly suggesting that the Pt/TmIG interface has important contribution to the DMI.
机译:重金属与磁绝缘体之间的界面Dzyaloshinskii-Moriya相互作用(DMI)的最新演示为极低功耗的设备提供了操纵磁绝缘体中手性自旋结构的可能性。但是,在此系统中,界面DMI的起源和强度仍存在争议。我们使用电传输测量来确定DMI强度在室温下与Pt / Tm3Fe5O12(TmIG)双层中的0.040 pJ / m相似。 TmIG饱和磁化强度和DMI强度表现出不同的温度依赖性,这归因于DMI主要由Fe离子而不是Tm离子贡献。在Pt和TmIG之间插入Cu层后,DMI强度降低到与0.012 pJ / m相似,并且拓扑霍尔效应消失,这强烈表明Pt / TmIG界面对DMI具有重要作用。

著录项

  • 来源
    《Applied Physics Letters》 |2020年第5期|052404.1-052404.5|共5页
  • 作者

  • 作者单位

    Nanjing Univ Jiangsu Prov Key Lab Nanotechnol Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Dept Phys Nanjing 210093 Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol & Engn Ningbo 315201 Peoples R China;

    Nanjing Univ Jiangsu Prov Key Lab Nanotechnol Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Dept Phys Nanjing 210093 Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 05:22:22

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号