Threshold switching of non-stoichiometric CuO nanowire for selector application

摘要

Tunable volatile and non-volatile resistive switching devices were demonstrated with non-stoichiometric CuO nanowire. These resistive switching modes were controlled by the stability of hole-based conductive filaments via the compliance current in the SET process. The CuO-nanowire based volatile threshold switching selector exhibited a bidirectional operation with high selectivity (10(4)), ultra-low OFF-current (<100 pA), and good reliability with the endurance over 10(5) cycles under the pulse operation. The present study demonstrates the nanowire-based threshold switching selector with the bottom-up method for future cross-point memory, logic application, and neuromorphic computing.