机译:栅场对拓扑绝缘子BiSbTeSe_2界面的影响
Univ Florida Dept Phys Gainesville FL 32611 USA|Univ Florida Quantum Theory Project Gainesville FL 32611 USA;
Purdue Univ Dept Phys & Astron W Lafayette IN 47907 USA|Cornell Univ Appl & Engn Phys Ithaca NY 14853 USA;
Univ Florida Dept Phys Gainesville FL 32611 USA|Univ Florida Quantum Theory Project Gainesville FL 32611 USA|Cent South Univ Sch Phys Sci & Elect Changsha 410012 Hunan Peoples R China;
Purdue Univ Dept Phys & Astron W Lafayette IN 47907 USA|Purdue Univ Sch Elect & Comp Engn W Lafayette IN 47907 USA|Purdue Univ Birck Nanotechnol Ctr W Lafayette IN 47907 USA|Purdue Univ Purdue Quantum Sci & Engn Inst W Lafayette IN 47907 USA;
Univ Florida Dept Phys Gainesville FL 32611 USA;
Univ Florida Dept Phys Gainesville FL 32611 USA|Univ Florida Quantum Theory Project Gainesville FL 32611 USA|Univ Florida Ctr Mol Magnet Quantum Mat Gainesville FL 32611 USA;
机译:APS -APS 3月会议2017年 - 事件 - 超薄3D拓扑绝缘体中的半型交叉拓扑绝缘子$ Bisbtes_2 $
机译:三维拓扑绝缘体Bisbtess_2的移动谱分析
机译:补偿拓扑绝缘体BiSbTeSe_2中微波频率下的大正磁导率
机译:CO激光MBE沉积中Bisbtese_2拓扑绝缘子的结构转变
机译:混合杂交功能中的静电场:场效应晶体管,拓扑绝缘体和热电应用
机译:拓扑绝缘体纳米带场效应器件中的门可调相对论质量和贝里相
机译:拓扑绝缘体Bisbtese2接口的门场效果