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Strain-engineered room temperature cavity polariton in ZnO whispering gallery microcavity

机译:ZnO耳语画廊微腔中的应变工程室温腔极化。

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Cavity polaritons, originating from the strong coupling effect between cavity modes and excitons, have been tremendously investigated because of their high potential in new or quantum optoelectronic devices. Among them, realization of their dynamic controllability is highly desirable for real applications. In this work, we present a dynamic modulation of cavity polaritons via strain-engineering in the ZnO whispering gallery microcavity. By using a home-made strain apparatus, a nearly uniaxial stress is precisely applied to ZnO microwires, thus inducing an internal strain along its c-axis. Dynamic tuning of cavity polariton modes is clearly characterized by angle-resolved microphotoluminescence spectroscopy. The coupled oscillator's model with fitting parameters of strain-dependent excitons' energies can well describe the modes' redshift. Moreover, we show that the modes' redshift can also be understood by the strain-induced refractive index increase, described by the Lorentz model, of which the underlying mechanism is also related to light-exciton strong coupling. Finally, the strain-engineered dynamic tuning of polariton lasing modes is demonstrated as well, and this actually provides convincing evidence for the polariton states surviving above the threshold. This work indicates that strain-engineered cavity polaritons would pave an alternative way for developing polariton-based integrated or flexible optoelectronic devices.
机译:腔极化子源于腔模与激子之间的强耦合效应,由于它们在新的或量子光电器件中具有很高的潜力,因此已经得到了广泛的研究。其中,对于实际应用非常需要实现其动态可控性。在这项工作中,我们通过ZnO耳语画廊微腔中的应变工程提出了腔极化子的动态调制。通过使用自制的应变装置,将几乎单轴应力精确地施加到ZnO微线,从而沿其c轴引起内部应变。角分辨微光致发光光谱清楚地表征了腔极化子模式的动态调谐。带有依赖于应变的激子能量的拟合参数的耦合振荡器模型可以很好地描述模式的红移。此外,我们表明模式的红移也可以通过洛伦兹模型描述的应变引起的折射率增加来理解,其潜在机理也与光激子强耦合有关。最后,还演示了应变工程对极化子激射模态的动态调谐,这实际上为极化子状态在阈值以上生存提供了令人信服的证据。这项工作表明应变工程的腔极化子将为开发基于极化子的集成或柔性光电器件铺平道路。

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  • 来源
    《Applied Physics Letters》 |2020年第2期|021104.1-021104.5|共5页
  • 作者单位

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China|Shanghai Normal Univ Dept Phys Shanghai 200234 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China|Univ Shanghai Sci & Technol Sch Mat Sci & Engn Shanghai 200093 Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys Shanghai 200083 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt & Fine Mech Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Shanghai Normal Univ Dept Phys Shanghai 200234 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

  • 入库时间 2022-08-18 04:58:50

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