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Large anomalous Hall effect in Ll_2-ordered antiferromagnetic Mn_3lr thin films

机译:Ll_2有序反铁磁Mn_3lr薄膜中的大异常霍尔效应

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摘要

Antiferromagnets having negligible net magnetization but a topologically nontrivial spin structure are a good testbed for investigating the intrinsic anomalous Hall effect (AHE). In this Letter, we explore L1(2)-ordered Mn3Ir thin films, which are one of the noncollinear antiferromagnets predicted to exhibit the intrinsic AHE due to their topologically nontrivial spin structure. The anomalous Hall conductivity as large as sigma(AHE) = 40 omega(-1) cm(-1) was observed at R.T. This value can be translated to the anomalous Hall conductivity per net magnetization M as |sigma(AHE)/M| = 0.6 V-1, which is much larger compared to those for general ferromagnetic materials. We also show that sigma(AHE) depends on the crystallinity of Mn3Ir as well as the chemical order parameter S characterizing a content of the L1(2) phase. Our results experimentally verify that L1(2)-ordered Mn3Ir thin films exhibit the topologically originated AHE.
机译:具有可忽略的净磁化强度但拓扑上很简单的自旋结构的反铁磁体是研究固有异常霍尔效应(AHE)的良好试验平台。在这封信中,我们探索了L1(2)顺序的Mn3Ir薄膜,这是一种非共线反铁磁体之一,由于其拓扑上很简单的自旋结构而被预测会显示出固有的AHE。在R.T.处观察到霍尔电导率异常大,σ(AHE)= 40Ω(-1)cm(-1)。该值可以转换为每净磁化强度M的异常霍尔电导率| | sigma(AHE)/ M |。 = 0.6 V-1,与普通铁磁材料相比要大得多。我们还表明,sigma(AHE)取决于Mn3Ir的结晶度以及表征L1(2)相含量的化学有序参数S。我们的结果实验验证了L1(2)排序的Mn3Ir薄膜表现出拓扑起源的AHE。

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