机译:TaAs_2中在高达约37 GPa的压力下具有强大的磁阻
ShanghaiTech Univ Sch Phys Sci & Technol Shanghai 201210 Peoples R China|Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China|Chinese Acad Sci Shanghai Inst Opt & Fine Mech Shanghai 201800 Peoples R China;
ShanghaiTech Univ Sch Phys Sci & Technol Shanghai 201210 Peoples R China;
ShanghaiTech Univ Sch Phys Sci & Technol Shanghai 201210 Peoples R China|Univ Chinese Acad Sci Sch Phys Sci Beijing 100049 Peoples R China;
Ctr High Pressure Sci & Technol Adv Res Shanghai 201203 Peoples R China;
Univ Shaoxing Dept Phys Shaoxing 312000 Peoples R China;
Harbin Inst Technol Dept Phys Harbin 150080 Heilongjiang Peoples R China;
Chinese Acad Sci Shanghai Adv Res Inst Shanghai Synchrotron Radiat Facil Shanghai 201204 Peoples R China;
ShanghaiTech Univ Sch Phys Sci & Technol Shanghai 201210 Peoples R China|ShanghaiTech Univ Analyt Instrumentat Ctr Sch Phys Sci & Technol Shanghai 201210 Peoples R China;
机译:压力高达30 GPa时半导体的磁阻和热电功率
机译:压力高达30 GPa时半导体的磁阻和热电功率
机译:压力高达37 GPa的乳液基质的冲击压缩
机译:高达30 GPa的压力下半导体的磁阻和热电力
机译:压力超过100 GPa时,氟化锂的折射率。
机译:超导高熵合金在高达190 GPa的压力下具有强大的零电阻
机译:在环境压力和1GPa的霍尔电子化合物UCU 5中的霍尔效应和磁阻
机译:在静水压力下Tl2Ba2CaCu2O8中Tc的压力依赖性为6Gpa