Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO_3 films

摘要

We demonstrate that the electron-electron interaction effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50K accompanied by an increase in the sheet resistance. The quantitative analysis of the magnetoresistance data yielded a large phase coherence length of electrons exceeding 450nm at 1.8K and revealed the electron-electron interaction being accountable for the breaking of electron phase coherency in La-doped SrSnO3 films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications of stannates in quantum coherent electronic devices owing to their large phase coherence length.