Rapid-throughput solution-based production of wafer-scale 2D MoS_2

摘要

Two-dimensional semiconductors, such as MoS2, are leading candidates for the production of next-generation optoelectronic devices such as ultrathin photodetectors and photovoltaics. However, the commercial application of 2D semiconductors is hindered by growth techniques requiring hours of heating and cooling cycles to produce large-area 2D materials. We present here a growth technique that leverages high-intensity optical irradiation of a solution-processed (NH4)(2)MoS4 precursor to synthesize MoS2 in one-tenth the time of typical furnace-based CVD. From start to finish, the technique produces uniform 2D MoS2 across 4-in. wafers within 15 min. Raman spectroscopy, in-plane XRD, and XPS show a 2H MoS2 crystal structure with a stoichiometry of 1.8: 1 S:Mo. AFM scans show that the films are 2.0nm thick MoS2 with a roughness of 0.68 nm. Photoluminescence spectroscopy reveals the characteristic 1.85 eV bandgap. The as-grown films were used to make field-effect transistors with a mobility of 0.022 cm(2) V-1 s(-1) and photodetectors with a responsivity of 300 mA/W and an external quantum efficiency of 0.016%, demonstrating their potential for optoelectronic device development. This rapid thermal processing growth technique reduces MoS2 synthesis time by an order of magnitude relative to comparable techniques and enables greater accessibility to 2D semiconductors for researchers and developers. Published under license by AIP Publishing.