Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

摘要

Hydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are fabricated. The diamond MOSFETs show a high maximum drain current density of 466mA/mm at V-GS = -6V, a transconductance of 58 mS/mm, and an off-state breakdown voltage of -53 V. The maximum output power density reaches 745 mW/mm at 2GHz continuous wave, which is the highest reported value for diamond transistors measured at 2 GHz. The output power value measured is lower than that estimated. Pulse I-V analysis shows that the main factor that affects the output power of the diamond MOSFETs is the traps in the channel. Published under license by AIP Publishing.