首页> 外文期刊>Applied Physics Letters >Hot electron heatsinks for microwave attenuators below 100 mK
【24h】

Hot electron heatsinks for microwave attenuators below 100 mK

机译:低于100 mK的微波衰减器的热电子散热器

获取原文
获取原文并翻译 | 示例
       

摘要

We demonstrate improvements to the cooling power of broad bandwidth (10 GHz) microwave attenuators designed for operation at temperatures below 100 mK. By interleaving 9-mu m thick conducting copper heatsinks in between 10-mu m long, 70-nm thick resistive nichrome elements, the electrical heat generated in the nichrome elements is conducted more readily into the heatsinks, effectively decreasing the thermal resistance between the hot electrons and cold phonons. For a 20 dB attenuator mounted at 20 mK, a minimum noise temperature of T-n similar to 50 mK was obtained for small dissipated powers (P-d 1 nW) in the attenuator. For higher dissipated powers, we find T-n proportional to P-d(1/4.4), with P-d = 100 nW corresponding to a noise temperature of 90 mK. This is in good agreement with thermal modeling of the system and represents nearly a factor of 20 improvement in cooling power or a factor of 1.8 reduction in T-n for the same dissipated power, when compared to a previous design without interleaved heatsinks. Published under license by AIP Publishing.
机译:我们展示了为在低于100 mK的温度下运行而设计的宽带(10 GHz)微波衰减器的冷却能力的改进。通过在10微米长,70纳米厚的电阻性镍铬合金元件之间插入9微米厚的导电铜散热器,镍铬合金元件中产生的电热可以更容易地传导到散热器中,从而有效地降低了热导体之间的热阻。电子和冷声子。对于安装在20 mK的20 dB衰减器,对于衰减器中的小耗散功率(P-d <1 nW),可获得类似于50 mK的最低噪声温度T-n。对于更高的耗散功率,我们发现T-n与P-d(1 / 4.4)成正比,其中P-d = 100 nW,对应于90 mK的噪声温度。与不带散热片的先前设计相比,这与系统的热模型非常吻合,并且在相同的耗散功率下,冷却功率几乎提高了20倍,T-n降低了1.8倍。由AIP Publishing授权发布。

著录项

  • 来源
    《Applied Physics Letters》 |2019年第15期|152602.1-152602.4|共4页
  • 作者单位

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA|Rigetti Comp, 775 Heinz Ave, Berkeley, CA 94710 USA;

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA;

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA;

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA|Intel Corp, Intel Labs, Hillsboro, OR 97124 USA;

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA|Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA;

    Univ Maryland, Dept Phys, College Pk, MD 20742 USA|Univ Maryland, Joint Quantum Inst & Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA;

    Lab Phys Sci, 8050 Greenmead Dr, College Pk, MD 20740 USA|Univ Maryland, Dept Phys, College Pk, MD 20742 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 04:12:52

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号