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Microwave absorbing properties of two dimensional materials CeP_5 enhanced after annealing treatment

机译:退火处理后二维材料CeP_5的吸波性能增强

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摘要

High efficiency, lightweight, and tunable microwave absorbing materials have drawn tremendous attention. Here, we have synthesized layered GeP5 bulk at high temperature and high pressure. Then, the GeP5 nanosheets are obtained by an efficient liquid-phase exfoliation method and display excellent microwave absorption performance as a microwave absorber. The reflection loss (RL) can achieve below -10 dB in a wide range of thicknesses and microwave frequencies. For further meeting the lightweight demand of microwave absorption materials, porous germanium (GeP5-570) is obtained from GeP5 via the annealing treatment. Microwave absorption characteristics can be significantly improved after annealing treatment. The minimum RI, values of porous germanium (GeP5-570) can reach -37.8 dB at a microwave frequency of 4.7 GHz under a thickness of 2.9 mm. The effective absorption bandwidth (RL -10 dB) of GeP5-570 is 11.8-14.3 GHz with a thickness of 1.2 mm. In addition, the RI, value can attain -20 dB in the frequency range of 3.8-16.1 GHz with various thicknesses from 1.0 to 3.5 mm. Published under license by AIP Publishing.
机译:高效,轻巧和可调的微波吸收材料引起了极大的关注。在这里,我们已经在高温和高压下合成了分层的GeP5体。然后,通过有效的液相剥离方法获得GeP5纳米片,并且显示出作为微波吸收剂的优异的微波吸收性能。在各种厚度和微波频率下,反射损耗(RL)均可达到-10 dB以下。为了进一步满足微波吸收材料的轻量化需求,通过退火处理从GeP5中获得了多孔锗(GeP5-570)。退火处理后,微波吸收特性可以得到显着改善。在2.9 GHz厚度下的4.7 GHz微波频率下,多孔锗(GeP5-570)的最小RI,值可达到-37.8 dB。 GeP5-570的有效吸收带宽(RL <-10 dB)为11.8-14.3 GHz,厚度为1.2 mm。此外,RI值可以在3.8-16.1 GHz的频率范围内达到-20 dB,厚度从1.0到3.5 mm不等。由AIP Publishing授权发布。

著录项

  • 来源
    《Applied Physics Letters》 |2019年第1期|013103.1-013103.5|共5页
  • 作者单位

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Natl Univ Singapore, Temasek Labs, 5A Engn Dr 1, Singapore 117411, Singapore;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Yanshan Univ, Hebei Key Lab Microstruct Mat Phys, Qinhuangdao 066004, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 04:09:29

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