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AIN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions

机译:自组装的等离子金和银纳米夹杂物的基于AIN的混合薄膜

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摘要

Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such as bandgap, plasmonic resonance, and complex dielectric function. Depending on the growth atmosphere, the metallic nanoinclusions self-organized into different geometries, such as nanodendrites, nano-disks, and nanoparticles, providing enhanced optical anisotropy in-plane and out-of-plane. The infrared transmission measurements demonstrate the signature peaks of AlN as well as a broad transmission window attributed to the plasmonic nanoinclusions. This unique AlN-metal hybrid thin film platform provides a route to modulate the optical response of wide bandgap III-V nitride semiconductors towards infrared sensing or all optical based integrated circuits.
机译:已经使用一步薄膜生长方法证明了具有等离子Au和Ag纳米夹杂物的基于氮化铝(AlN)的两相纳米复合薄膜。此类基于AlN的纳米复合材料在保持其宽带隙半导体行为的同时,还呈现出可调谐的光学特性,例如带隙,等离子体共振和复杂的介电功能。根据生长气氛,金属纳米夹杂物会自组织成不同的几何形状,例如纳米树枝状晶体,纳米盘和纳米粒子,从而在平面内和平面外提供增强的光学各向异性。红外透射测量结果表明AlN的特征峰以及宽泛的透射窗口归因于等离子体纳米包裹体。这个独特的AlN-金属混合薄膜平台提供了一条途径,可调节宽带隙III-V氮化物半导体对红外感应或所有基于光学的集成电路的光学响应。

著录项

  • 来源
    《Applied Physics Letters》 |2019年第2期|023103.1-023103.5|共5页
  • 作者单位

    Purdue Univ, Dept Phys & Astron, W Lafayette, IN 47907 USA;

    Purdue Univ, Dept Mat Engn, W Lafayette, IN 47907 USA;

    Purdue Univ, Dept Elect Engn, W Lafayette, IN 47907 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 04:09:28

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