Self-assembled single-digit nanometer memory cells

摘要

The current spintronic research focuses on lowering switching energy and maintaining good thermal stability of nanomagnets, which could ensure further development of memory technology. Here, we investigate a single-digit nanometer magnetic tunnel junction composed of self-assembled FePt nanopillars isolated by crystallized ZrO2. We find that the lateral size range of the operational device could be sub-7-nm by maintaining outstanding thermal stability. Published by AIP Publishing.