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Distinguishing charge and strain coupling in ultrathin (001)-La_(0.7)Sr_(0.3)MnO_3/ PMN-PT heterostructures

机译:超薄(001)-La_(0.7)Sr_(0.3)MnO_3 / PMN-PT异质结构的区分电荷和应变耦合

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摘要

Interfacial charge and strain distributions inside artificial perovskite ABO(3) heterostructures often affect intriguing physical properties that are important to device performance. Normally, both charge and strain coexist across the interfaces, and their exact roles in determining the properties remain elusive. In the present work, La0.7Sr0.3MnO3 (LSMO) ultrathin films were grown on (001)-0.7Pb(Mg1/3Nb2/3) O-3-0.3PbTiO(3) (PMNPT) single-crystal substrates to discriminate between the effect of charge and strain on the transport and magnetoelectric properties. In heterostructures with thicker LSMO films, the strain effect dominates the resistance and the magnetic moment depends on the external electric field. With the decreasing LSMO thickness, the butterfly-like resistance-electric-field (R-E) and magnetization-electric-field (M-E) curves become loop-like, indicating that charge effects dominate strain effects in determining the electric field that controls the transport and magnetic properties. Furthermore, soft-x-ray absorption spectra of 32 and 4 nm LSMO/PMNPT samples at the Mn L edge under an applied electric field of +/- 6 kV/cm indicate that orbital reconstruction also plays an important role in interfacial magnetoelectric coupling. Published by AIP Publishing.
机译:人工钙钛矿ABO(3)异质结构内部的界面电荷和应变分布通常会影响对设备性能很重要的有趣物理特性。通常,电荷和应变都在界面上共存,而它们在确定性能方面的确切作用仍然难以捉摸。在目前的工作中,La0.7Sr0.3MnO3(LSMO)超薄膜生长在(001)-0.7Pb(Mg1 / 3Nb2 / 3)O-3-0.3PbTiO(3)(PMNPT)单晶衬底上,以区分电荷和应变对传输和磁电特性的影响。在具有较厚LSMO膜的异质结构中,应变效应决定了电阻,而磁矩则取决于外部电场。随着LSMO厚度的减小,蝴蝶状的电阻电场(RE)和磁化电场(ME)曲线变为环形,表明电荷效应在确定控制传输和传递电场的电场中占主导地位。磁性。此外,在+/- 6 kV / cm的外加电场下,Mn L边缘的32 nm和4 nm LSMO / PMNPT样品的软X射线吸收光谱表明,轨道重构在界面磁电耦合中也起着重要作用。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第26期|262901.1-262901.5|共5页
  • 作者单位

    Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China;

    Hefei Univ Technol, Lab Quantum Mat & Interfaces, Hefei 230009, Anhui, Peoples R China;

    Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Quantum Mat & Photon Technol Lab, Hefei 230026, Anhui, Peoples R China;

    Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Guangdong, Peoples R China;

    Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China;

    Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China;

    Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 04:09:25

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