Sensitivity reduction mechanisms in amorphous selenium photoconductive x-ray image detectors

摘要

Sensitivity reduction in amorphous Se-based photoconductive x-ray image detectors due to previous exposures is studied by Monte Carlo simulation. Collected charge, hence x-ray sensitivity, is calculated by considering deep carrier trapping, taking into account the effects of trap filling, recombination between trapped and drifting carriers and the generation of x-ray induced new deep trap centers. Space charge effects on the electric field, and hence, the effects of electric field on electron hole pair generation and charge transport are also considered. The comparison of the model with the experimental data reveals that the recombination between trapped and oppositely charged drifting carriers and x-ray induced new deep trap centers are mainly responsible for the sensitivity reduction in biased a-Se-based x-ray detectors.