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Effective masses and complex dielectric function of cubic HfO_(2)

机译:立方HfO_(2)的有效质量和复介电函数

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The electronic band structure of cubic HfO_(2) is calculated using an ab initio all-electron self-consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account full-relativistic contributions. From the band structure, the carrier effective masses and the complex dielectric function are obtained. The Γ-isotropic heavy and light electron effective masses are shown to be several times heavier than the electron tunneling effective mass measured recently. The imaginary part of the complex dielectric function ε_(2)(ω) is in good agreement with experimental data from ultraviolet spectroscopic ellipsometry measurements in bulk yttria-stabilized HfO_(2) as well as with those performed in films deposited with the tetrakis diethylamido hafnium precursor for energies smaller than 9.5 eV.
机译:立方HfO_(2)的电子能带结构是使用从头算起的全电子自洽线性增强平面波方法,在局部密度近似的框架内并考虑了全相对论贡献来计算的。从能带结构中,获得载流子有效质量和复介电函数。各向同性重和轻电子有效质量显示出比最近测得的电子隧穿有效质量重几倍。复介电函数ε_(2)(ω)的虚部与在稳定​​的氧化钇稳定的HfO_(2)中的紫外分光椭圆光度法测量的实验数据以及在用四烷基二乙酰胺基deposited沉积的薄膜中进行的实验数据非常吻合能量小于9.5 eV的前驱体。

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