Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

摘要

We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of ～140 nS and a mobility of 75 cm~(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10~(4)-10~(5), a high transconductance of 1.9 μS, and high electron mobility above 1000 cm~(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed.