Improvement in spatial resolution of plasma-enhanced quantum-well intermixing by stress-inducing dielectric mask

摘要

We report the use of a stress-inducing dielectric mask to improve the spatial resolution of the proximity quantum-well intermixing process. Photoluminescence and Raman spectroscopy were used to study the band gap modification and the spatial resolution using Ar plasma in the InGaAs/InGaAsP laser structure. A spatial resolution of 2.4 mum has been achieved with the presence of an SixNy annealing cap as a stress-inducing mask. The simple technique provides a promising approach of lateral band gap tuning with a high spatial resolution for high-density photonic integrated circuits. (C) 2004 American Institute of Physics.