Finite size effects in stress analysis of interconnect structures

摘要

Conventional formulations of thermal stress evolution in interconnect structures usually ignore the interface integrity between the various levels. In this letter we present thermal and residual stress versus temperature data from simple copper thin-film structures on silicon. The results indicate that interconnection models which assume fully elastic behavior and perfectly bonded interfaces may yield inaccurate predictions of the thermo-mechanical response for feature sizes smaller than 10 μm.