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Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells

机译:GaN / AlN多量子阱中1.55μm处的超快速子带间弛豫和非线性磁化率

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摘要

Using a degenerate pump-probe technique on the Brewster configuration at room temperature, we investigate the dynamics of the intersubband transition in GaN/AlN multiple-quantum wells. The relaxation dynamics is found to consist of ultrafast (~140 fs) and slower (~1.3 ps) components. We estimate the third-order susceptibility for the Brewster configuration to be ~5.5×10~(-18) m~(2)/V~(2), which indicates that its value becomes ~2.2×10~(-16) m~(2)/V~(2) when a light beam is parallel to the well.
机译:使用简并的​​泵浦探针技术在室温下的Brewster配置上,我们研究了GaN / AlN多量子阱中子带间跃迁的动力学。发现松弛动力学由超快(〜140 fs)和较慢(〜1.3 ps)的分量组成。我们估计Brewster构型的三阶磁化率约为5.5×10〜(-18)m〜(2)/ V〜(2),这表明其值变为〜2.2×10〜(-16)m当光束平行于阱时为〜(2)/ V〜(2)。

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