Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C. Q. Noakes; P. Bailey; S. Al-Harthi; F. Gard

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Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

机译：中能离子散射法测定InAs-GaAs量子点的组成分布

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摘要

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

机译：已经使用中能离子散射（MEIS）确定了低生长速率InAs-GaAs量子点（QDs）沿[001]生长方向的成分分布。 In浓度从QD顶部的100％In到其底部的20％的线性分布提供了与MEIS能谱的最佳拟合。

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来源
《Applied Physics Letters》 |2005年第15期|p.153110.1-153110.3|共3页
作者
P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C. Q. Noakes; P. Bailey; S. Al-Harthi; F. Gard;
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作者单位

Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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入库时间 2022-08-18 03:22:45

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Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

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